Physical and electrical characteristics of HfO2 gate dielectrics deposited by ALD and MOCVD

Journal of the Electrochemical Society

Volumn 152, Issue 3, 2005, Pages

  Triyoso, D H ^a   Ramon, M ^a   Hegde, R I ^a   Roan, D ^a   Garcia, R ^a   Baker, J ^b   Wang, X D ^a   Fejes, P ^a   White Jr , B E ^a   Tobin, P J ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE; CAPACITORS; CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); METALLORGANIC CHEMICAL VAPOR DEPOSITION; STRESS ANALYSIS; THICKNESS MEASUREMENT; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC LAYER DEPOSITION (ALD); GATE DIELECTRICS; VOLTAGE SHIFT; X-RAY REFLECTOMETRY;

HYDROGEN INORGANIC COMPOUNDS;

EID: 20144385107     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1857791     Document Type: Article

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