1/f noise in positive-negative-positive (PNP) polycrystalline silicon-emitter bipolar transistors

Journal of Applied Physics

Volumn 97, Issue 8, 2005, Pages

  Ul Hoque, Md Mazhar ^a   Celik Butler, Zeynep ^a   Trogolo, Joe ^b   Weiser, Douglas ^b   Green, Keith ^b  

^a University of Texas at Arlington   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FLUCTUATION MECHANISMS; INTERFACIAL OXIDES (IFO); NOISE POWER; SPECTRAL DENSITY;

ANNEALING; DIFFUSION; ELECTRIC CURRENTS; GRAIN BOUNDARIES; OXIDES; OXYGEN; POLYCRYSTALLINE MATERIALS; POLYSILICON; SEMICONDUCTING SILICON; SPURIOUS SIGNAL NOISE;

BIPOLAR TRANSISTORS;

EID: 21444460600     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1868058     Document Type: Article

References (56)

1. I. R. C. Post and P. Ashburn, IEEE Trans. Electron Devices 38, 2442 (1991).
2. S. Ratanaphanyarat, W. Rausch, M. Smadi, M. J. Saccamango, S. N. Mei, S. F. Chu, P. A. Ronsheim, and J. O. Chu, IEEE Electron Device Lett. 12, 261 (1991).
3. I. R. C. Post and P. Ashburn, Fabrication and Characterization of PNP Polysilicon Emitter Bipolar Transistors., Proceedings of ESSDERC '89-19th European Solid State Device Research Conference, Berlin, West Germany, (Springer, Berlin, West Germany, 1989), pp. 453-456.
4. P. F. Lu, J. D. Warnock, J. D. Cressler, K. A. Jenkins, and K. Y. Toh, IEEE Trans. Electron Devices 38, 1410 (1991).
5. P. R. Gray, P. J. Hurst, S. H. Lewis, and R. G. Meyer, Analysis and Design of Analog Integrated Circuits (Wiley, New York, 2001).
6. J. D. Cressler, J. Warnock, D. L. Harame, J. N. Burghartz, K. A. Jenkins, and C. T. Chuang, IEEE Electron Device Lett. 14, 523 (1993).
7. E. Simoen, S. Decoutere, A. Cuthbertson, C. L. Claeys, and L. Deferm, IEEE Trans. Electron Devices 43, 2261 (1996).
8. M. J. Deen and F. Pascal, Low Frequency Noise Behavior of Polysilicon Emitter Bipolar Junction Transistors-A review., Noise in Devices and Circuits, Proceedings of the SPIE Conference, Santa Fe, NM, (SPIE, Bellingham, WA, 2003), Vol. 5113, pp. 1-15.
9. O. W. Purbo and C. R. Selvakumar, Solid-State Electron. 34, 821 (1991).
10. R. Bashir, F. Hebert, D. Basile, and D. Su, Investigation of Hole and Electron Back Injected Tunneling Currents in a Polysilicon Emitter Complementary Bipolar Technology., Proceedings of ESSDERC '96-26th European Solid State Device Research Conference, Bologna, Italy, (Editions Frontieres, Gif-sur-Yvette, France, 1996), pp. 219-224.
11. A. P. Laser, K. M. Chu, D. L. Pulfrey, C. M. Maritan, and N. G. Tarr, Solid-State Electron. 33, 813 (1990).
12. H. Schaber, J. Bieger, B. Benna, and T. Meister, Vertical Scaling Considerations for Polysilicon-Emitter Bipolar Transistors., Proceedings of ESSDERC '87-17th European Solid State Device Research Conference, Bologna, Italy, (North Holland, Amsterdam, Netherlands, 1988), pp. 685-688.
13. C. M. Maritan and N. G. Tarr, IEEE Trans. Electron Devices 36, 1139 (1989).
14. M. J. Deen and E. Simoen, IEE Proc.-G: Circuits, Devices Syst. 149, 40 (2002).
15. M. J. Deen, J. Ilowski, and P. Yang, J. Appl. Phys. 77, 6278 (1995).
16. N. S. Shahrivar, W. R. White, P. Ashburn, and I. Post, Low Frequency Noise of NPNPNP Polysilicon Emitter Bipolar Transistors., Proceedings of ESSDERC '90-20th European Solid State Device Research Conference, Nottingham, UK, (Adam Hilger, Bristol, UK, 1990), pp. 341-344.
17. N. S. Shahrivar, W. R. White, P. Ashburn and I. Post, Modeling and Characterization of Noise of Polysilicon-Emitter Bipolar Transistors., Proceedings of the Bipolar Circuits and Technology Meeting, Minneapolis, MN, (IEEE, New York, 1990), pp. 236-238.
18. M. J. Deen, S. L. Rumyantsev, and M. Schroter, J. Appl. Phys. 85, 1192 (1999).
19. H. A. W. Markus and T. G. M. Kleinpenning, IEEE Trans. Electron Devices 42, 720 1995.
20. C. Delseny, A. Penarier, F. Pascal, S. G. Jarrix, and P. Llinares, Microelectron. Reliab. 40, 1869 (2000).
21. X. Y. Chen, M. J. Deen, Z. X. Yan, and M. Schroter, Electron. Lett. 34, 219 (1998).
22. J. Zhao, G. P. Li, K. Y. Liao, M. R. Chin, and J. Y. C. Sun, On the Investigation of 1f Noise of Polysilicon Emitter P-N-P Transistors in a C-BiCMOS Technology., Proceedings of the International Symposium on VLSI Technology, Systems, and Applications, Taipei, Taiwan, (IEEE, New York, 1993), pp. 306-309.
23. M. J. Deen, S. Rumyantsev, R. Bashir and R. Taylor, J. Appl. Phys. 84, 625 (1998).
24. M. J. Deen and S. Rumyantsev, Microelectron. Reliab. 40, 1855 (2000).
25. M. J. Deen, Low Frequency Noise in NPN and PNP Polysilicon Emitter Bipolar Junction Transistors., Proceedings of the Quantum 1f Noise and Other Low Frequency Fluctuations in Electronic Devices, St. Louis, MO, (AIP, New York, 1999), Vol. 466, pp. 105-122.
26. J. Kilmer, A. Van Der Ziel, and G. Bosman, Solid-State Electron. 26, 71 (1983).
27. J. Kilmer, A. Van Der Ziel, and G. Bosman, Solid-State Electron. 28, 287 (1985).
28. T. G. M. Kleinpenning, IEEE Trans. Electron Devices 41, 1981 (1994).
29. X. Zhu and A. Van Der Ziel, IEEE Trans. Electron Devices 32, 658 (1985).
30. D. S. Quon, G. J. Sonek and G. P. Li, IEEE Electron Device Lett. 15, 430 (1994).
31. E. Zhao, Z. Çelik-Butler, F. Thiel, and R. Dutta, IEEE Trans. Electron Devices 49, 2230 (2002).
32. M. M. Hoque, Z. Celik-Butler, D. Lan, D. Weiser, J. Trogolo, and K. Green, IEEE Trans. Electron Devices 51, 1504 (2004).
33. S. M. Sze, High-Speed Semiconductor Devices (Wiley, New York, 1990).
34. A. G. O'Neill, Solid-State Electron. 29, 305 (1986).
35. N. E. Moiseiwitsch and P. Ashburn, IEEE Trans. Electron Devices 41, 1249 (1994).
36. T. Gravier, J. Kirtsch, C. d'Anterroches, and A. Chantre, IEEE Trans. Electron Devices 17, 434 (1996).
37. Z. Celik-Butler, M. M. Hoque, E. Zhao, D. Lan, D. Weiser, J. Trogolo, and K. Green, 1f Noise in Advanced Bipolar Technologies., Noise in Devices and Circuits, Proceedings of the SPIE Conference, Santa Fe, NM, (SPIE, Bellingham, WA, 2003), Vol. 5113, pp. 120-132.
38. T. G. M. Kleinpenning, IEEE Trans. Electron Devices 39, 1501 (1992).
39. T. G. M. Kleinpenning and A. J. Holden, Microelectron. Eng. 19, 711 (1992).
40. Y. Mourier, S. G-Jarrix, C. Delseny, F. Pascal, A. Penarier, and D. Gasquet, Semicond. Sci. Technol. 16, 233 (2001).
41. S. Jarrix, C. Delseny, F. Pascal, and G. Lecoy, J. Appl. Phys. 81, 2651 (1997).
42. M. Sanden, O. Marinov, M. J. Deen, and M. Ostling, IEEE Trans. Electron Devices 49, 514 (2002).
43. M. Von Haartman, B. G. Malm, and M. Ostling, Decreased Low-Frequency Noise in Polysilicon Emitter Bipolar Transistors by Epitaxial Regrowth., Proceedings of the 17th International Conference on Noise and Fluctuations, Prague, Czech Republic, (CNRL s.r.o., Czech Republic, 2003), pp. 415-418.
44. D. B. M. Klaassen, Solid-State Electron. 35, 953 (1992).
45. P. Ashburn and B. Soerowirdjo, IEEE Trans. Electron Devices 31, 853 (1984).
46. K. Suzuki, IEEE Trans. Electron Devices 38, 1868 (1991).
47. T. H. Ning and R. D. Isaac, IEEE Trans. Electron Devices 27, 2051 (1980).
48. N. F. Rinaldi, IEEE Trans. Electron Devices 44, 395 (1997).
49. T. G. M. Kleinpenning, Solid-State Electron. 21, 927 (1978).
50. T. G. M. Kleinpenning, Solid-State Electron. 25, 78 (1982).
51. Z. Yu, B. Ricco, and R. W. Dutton, IEEE Trans. Electron Devices 31, 773 (1984).
52. J. N. Burghartz, J. Y. C. Sun, C. L. Stanis, S. R. Mader, and J. D. Warnock, IEEE Trans. Electron Devices 39, 1477 (1992).
53. N. S. Shahrivar, H. A. Kemhadjian, W. R. White, P. Ashburn, and J. D. Williams, Microelectron. Eng. 15, 533 (1991).
54. L. B. Kiss and T. G. M. Kleinpenning, Physica B & C 145, 181 (1987).
55. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
56. D. B. M. Klaassen, Solid-State Electron. 35, 961 (1992).