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Volumn 17, Issue 9, 1996, Pages 434-436

Fluorine effects in n-p-n double-diffused polysilicon emitter bipolar transistors

Author keywords

[No Author keywords available]

Indexed keywords

BORON COMPOUNDS; CHEMICAL VAPOR DEPOSITION; ELECTRIC CURRENTS; ELECTRIC PROPERTIES; FLUORINE; ION IMPLANTATION; OXIDES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

EID: 0030244473     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.536284     Document Type: Article
Times cited : (2)

References (9)
  • 1
    • 4243062986 scopus 로고
    • Effectiveness of polycrystalline silicon diffusion sources
    • Nov.
    • W. J. M. J. Josquin, P. R. Boudewijn, and Y. Tamminga, "Effectiveness of polycrystalline silicon diffusion sources," Appl. Phys. Lett., vol. 43, pp. 960-962, Nov. 1983.
    • (1983) Appl. Phys. Lett. , vol.43 , pp. 960-962
    • Josquin, W.J.M.J.1    Boudewijn, P.R.2    Tamminga, Y.3
  • 4
    • 0038140111 scopus 로고
    • + polycrystalline silicon layers given single and double diffusions
    • Oct.
    • + polycrystalline silicon layers given single and double diffusions," J. Appl. Phys., vol. 72, pp. 3169-3178, Oct. 1992.
    • (1992) J. Appl. Phys. , vol.72 , pp. 3169-3178
    • Williams, J.D.1    Ashburn, P.2
  • 6
    • 0028464746 scopus 로고
    • The benefits of fluorine in pap polysilicon emitter bipolar transistors
    • July
    • N. E. Moisewitsch and P. Ashburn, "The benefits of fluorine in pap polysilicon emitter bipolar transistors," IEEE Trans. Electron Devices, vol. 41, pp. 1249-1256, July 1994.
    • (1994) IEEE Trans. Electron Devices , vol.41 , pp. 1249-1256
    • Moisewitsch, N.E.1    Ashburn, P.2
  • 7
    • 84907689932 scopus 로고    scopus 로고
    • Interfacial oxide break-up in n-p-n polysilicon emiter bipolar transistors by fluorine implantation
    • _. "Interfacial oxide break-up in n-p-n polysilicon emiter bipolar transistors by fluorine implantation," in Proc. ESSDERC-1994, pp. 55-58.
    • Proc. ESSDERC-1994 , pp. 55-58
  • 8
    • 0029308858 scopus 로고
    • Impact of fluorine incorporation in the polysilicon emitter of n-p-n bipolar transistors
    • May
    • C. R. Bolognesi and M. B. Rowlandson, "Impact of fluorine incorporation in the polysilicon emitter of n-p-n bipolar transistors", IEEE Electron Device Lett., vol. 16, pp. 172-174, May 1995.
    • (1995) IEEE Electron Device Lett. , vol.16 , pp. 172-174
    • Bolognesi, C.R.1    Rowlandson, M.B.2
  • 9
    • 1642321332 scopus 로고
    • Analysis and minimization of small-geometry effects on the current gain of self-aligned etched-polysilicon emitter bipolar transistors
    • June
    • A. Nouailhat, G. Giroult-Matlakowski, A. Marty, N. Degors, M.D. Bruni, and A. Chantre, "Analysis and minimization of small-geometry effects on the current gain of self-aligned etched-polysilicon emitter bipolar transistors," IEEE Trans. Electron Devices, vol. 39, pp. 1392-1397, June 1992.
    • (1992) IEEE Trans. Electron Devices , vol.39 , pp. 1392-1397
    • Nouailhat, A.1    Giroult-Matlakowski, G.2    Marty, A.3    Degors, N.4    Bruni, M.D.5    Chantre, A.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.