Temperature dependence of 1/f noise in polysilicon-emitter bipolar transistors

IEEE Transactions on Electron Devices

Volumn 49, Issue 12, 2002, Pages 2230-2236

  Zhao, Enhai ^a   Çlik Butler, Zeynep ^b   Thiel, Frank ^c   Dutta, Ranadeep ^c  

^a Southern Methodist University   (United States)

^b The University of Texas at Arlington   (United States)

^c Leegerity Inc   (United States)

Author keywords

1 f noise; Low frequency noise; Noise modeling; Polysilicon emitter bipolar junction transistors (BJT)

Indexed keywords

ACTIVATION ENERGY; CHARGE CARRIERS; COMPUTER SIMULATION; CURRENT DENSITY; ELECTRON TUNNELING; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); LOW TEMPERATURE EFFECTS; POLYSILICON; SILICA; SPURIOUS SIGNAL NOISE; SUPERCONDUCTING TRANSITION TEMPERATURE;

ELECTRON RANDOM WALK MODEL; LOW-FREQUENCY NOISE; POLYSILICON-EMITTER BIPOLAR TRANSISTORS; TEMPERATURE DEPENDENCE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036999522     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.805223     Document Type: Article

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