On the modeling of polysilicon emitter bipolar transistors

IEEE Transactions on Electron Devices

Volumn 44, Issue 3, 1997, Pages 395-403

  Rinaldi, Niccolö F ^a  

^a UNIVERSITY OF NAPLES FEDERICO II   (Italy)

Author keywords

And different models are compared; Finally; Minority carrier injection and storage in the singlecrystal region is addressed; The effect of oxide breakup on both current gain and emitter transit time is also considered

Indexed keywords

BIPOLAR TRANSISTORS; CHARGE CARRIERS; CURRENT DENSITY; DIFFUSION; ELECTRON TRANSPORT PROPERTIES; GRAIN BOUNDARIES; INTERFACES (MATERIALS); OXIDES; SEMICONDUCTING SILICON;

CURRENT GAIN; EMITTER TRANSIT TIME; MICROSCOPIC TRANSPORT PROPERTIES; MINORITY CARRIER DIFFUSION LENGTH; MINORITY CARRIER INJECTION; OXIDE BREAKUP; POLYSILICON EMITTER BIPOLAR TRANSISTORS; RECOMBINATION VELOCITY;

SEMICONDUCTOR DEVICE MODELS;

EID: 0031103923     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.556149     Document Type: Article

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