Investigation of hole and electron back injected tunneling currents in a poly-silicon emitter complementary bipolar technology

European Solid-State Device Research Conference

Volumn , Issue , 1996, Pages 221-224

  Bashir, R ^a   Hebert, F ^b   Basile, D ^c   Su, D ^c  

^a NATIONAL SEMICONDUCTOR CORPORATION   (United States)

^b Spectrian Corporation   (United States)

^c Philips Analytical Research Laboratory   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEMENTARY BIPOLAR; TUNNELING CURRENT;

EID: 84920744627     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. R. Bashir, et al, Proceedings of the 1994 BCTM. p. 225
2. C. Davis, et al, Proceedings of the 1992 BCTM. p. 173
3. H. C. De Graaff, et al, IEEE Trans, on Elect. Devices, Vol. 26, No. 11, Nov 1979, p. 1771
4. K. Suzuki, IEEE Trans, on Electron Devices, Vol. 38, No. 8, August 1991, p. 1868
5. K. K. Ng, et, al, Journal of Applied Physics, 51(4), April 1980, p. 2153