Effects of emitter dimensions on low-frequency noise in double-polysilicon BJTs

Electronics Letters

Volumn 34, Issue 2, 1998, Pages 219-220

  Chen, X Y ^a   Deen, M J ^a   Yan, Z X ^b   Schroter, M ^b  

^a SIMON FRASER UNIVERSITY   (Canada)

^b Rockwell Semiconductor Systems   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SPURIOUS SIGNAL NOISE;

BIPOLAR JUNCTION TRANSISTORS (BJT);

BIPOLAR TRANSISTORS;

EID: 0031699159     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980173     Document Type: Article

References (7)

1. KLEINPENNING, T.G.M.: 'Low-frequency noise in modern bipolar transistors: Impact of intrinsic transistor and parasitic series resistances', IEEE Trans., 1994, ED-41, (11), pp. 1981-1991
2. SIABI-SHAHRIVAR, N., REDMAN-WHITE, W., ASHBURN, P., and KEMHADJIAN, H.A.: 'Reduction of 1/f noise in polysilicon emitter bipolar transistors', Solid Stale Electron., 1994, 38, (2), pp. 389-400
3. KOSIER, S.L., WEI, A., SCHRIMPF, R.D., FLEETWOOD, D.M., DELAUS, M.D., PEASE, R.L., and COMBS, W.E.: 'Physically based comparison of hot-carrier-induced degradation in BJTs', IEEE Trans., 1995, ED-42, (3), pp. 436-444
4. MOUNIB, A., GHIBAUDO, G., BALESTRA, F., POGANY, D., CHANTRE, A., and CHROBOCZEK, J.A.: 'Low frequency (1/f) noise model for the base current in polysilicon emitter bipolar junction transistors', J. Appl. Phys., 1996, 79, (6), pp. 3330-3306
5. DEEN, M.J., ILOWSKI, J., and YANG, P.: 'Low frequency noise in polysilicon-emitter bipolar junction transistors', J. Appl. Phys., 1995, 77, (12), pp. 6278-6288
6. MARKUS, H.A.W., and KLEINPENNING, T.G.M.: 'Low-frequency noise in polysilicon emitter bipolar transistors', IEEE Trans., 1995, ED-42, (4), pp. 720-727
7. HOOGE, F.N., KLEINPENNING, T.G.M., and VANDAMME, L.K.J.: 'Experimental studies on 1/f noise', Rep. Prog. Phys., 1981, 44, pp. 479-532