Effect of interfacial oxide thickness on 1/f noise in polysilicon emitter BJTs

IEEE Transactions on Electron Devices

Volumn 51, Issue 9, 2004, Pages 1504-1513

  Ul Hoque, Mazhar ^a   Çelik Butler, Zeynep ^a   Lan, Darby ^b,c   Weiser, Douglas ^d   Trogolo, Joe ^d   Green, Keith R ^d  

^a IEEE   (United States)

^b Southern Methodist University   (United States)

^c HPL Technologies Inc   (United States)

^d TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BASE BIAS RESISTANCE; BIPOLAR JUNCTION TRANSISTOR; DIFFUSION FLUCTUATIONS; DOMINANT NOISE CONTRIBUTION; HOOGE PARAMETER; INTERFACIAL OXIDE; INTERNAL EMITTER RESISTANCES; POLYSILICON EMITTER; VOLTAGE NOISE POWER SPECTRAL DENSITIES;

COMPOSITION EFFECTS; DIFFUSION; ELECTRIC CURRENT COLLECTORS; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TUNNELING; INTERFACES (MATERIALS); OXIDES; POLYSILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR JUNCTIONS; SPURIOUS SIGNAL NOISE;

BIPOLAR TRANSISTORS;

EID: 4444372456     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.833953     Document Type: Article

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