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Semiconductor Science and Technology

Volumn 16, Issue 4, 2001, Pages 233-238

Characterization of polysilicon bipolar transistors by low-frequency noise and correlation noise measurements

(6) Mourier, Y a G Jarriz, S a Delseny, C a Pascal, F a Penarier A a Gasquet, D a

a CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; INTERFACES (MATERIALS); POLYSILICON; RAPID THERMAL ANNEALING; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SIGNAL NOISE MEASUREMENT;

CORRELATION NOISE MEASUREMENTS; POLYSILICON BIPOLAR TRANSISTORS;

BIPOLAR TRANSISTORS;

EID: 0035309569 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/16/4/308 Document Type: Article

Times cited : (7)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.