1/f noise in advanced bipolar technologies

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5113, Issue , 2003, Pages 120-132

  Celik Butler, Zeynep ^a   Ul Hoque, Md Mazhar ^a   Zhao, Enhai ^b   Lan, Darby ^b   Weiser, Douglas ^c   Trogolo, Joe ^c   Green, Keith ^c  

^a University of Texas at Arlington   (United States)

^b Southern Methodist University   (United States)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

1 f noise; Bipolar junction transistors; Random telegraph signals

Indexed keywords

BIPOLAR TRANSISTORS; GRAIN BOUNDARIES; PROBABILITY; VLSI CIRCUITS;

BARRIER HEIGHT; RANDOM TELEGRAPH SIGNALS;

SIGNAL NOISE MEASUREMENT;

EID: 0042324537     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.489022     Document Type: Conference Paper

References (7)

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