Structural characterization of codeposition growth β-FeSi2 film

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 2, 1998, Pages 622-625

  Lin, Chenglu ^a   Wang, Lianwei ^a   Chen, Xiangdong ^a   Chen, L F ^b   Wang, L M ^b  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

Co deposition; Epitaxial growth; M ssbauer; Resistance; Structure; TEM; FeSi2

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; DEPOSITION; EPITAXIAL GROWTH; FILM GROWTH; INTERFACES (MATERIALS); IRON COMPOUNDS; MOSSBAUER SPECTROSCOPY; POLYCRYSTALLINE MATERIALS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

REACTIVE DEPOSITION EPITAXY; SEMICONDUCTING IRON DISILICIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032003542     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.622     Document Type: Article

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