Influence of β-FeSi2 particle size and Si growth rate on 1.5 μm photoluminescence from Si/β-FeSi2-particles/Si structures grown by molecular-beam epitaxy

Journal of Applied Physics

Volumn 95, Issue 10, 2004, Pages 5483-5486

  Ozawa, Y ^a   Ohtsuka, T ^a   Li, Cheng ^a   Suemasu, T ^a   Hasegawa, F ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; DEPOSITION; DISLOCATIONS (CRYSTALS); ELECTRON BEAMS; ELECTRON DIFFRACTION; EMISSION SPECTROSCOPY; FILM GROWTH; LIGHT EMITTING DIODES; MAGNETRON SPUTTERING; MOLECULAR BEAM EPITAXY; PARTICLE SIZE ANALYSIS; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

EPITAXIAL ORIENTATIONS; OPTICAL FIBER COMMUNICATION; REACTIVE DEPOSITION EPITAXY (RDE); SEMICONDUCTING IRON DISILICIDE (Β-FESI2);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 2942620601     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1707233     Document Type: Article

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