Improvement of the electrical properties of β-FeSi2 films on Si (001) by high-temperature annealing

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 3 A/B, 2000, Pages

  Takakura, Ken Ichiro ^a   Suemasu, Takashi ^a   Hiroi, Noriyoshi ^a   Hasegawa, Fumio ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; HIGH TEMPERATURE OPERATIONS; MOLECULAR BEAM EPITAXY; MULTILAYERS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS; SILICON; X RAY DIFFRACTION ANALYSIS;

CRYSTAL QUALITY; HIGH TEMPERATURE ANNEALING; IRON DISILICIDE;

IRON COMPOUNDS;

EID: 0033732943     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l233     Document Type: Article

References (16)

1. M. C. Bost and J. E. Mahan: J. Appl. Phys. 58 (1985) 2696.
2. M. C. Bost and J. E. Mahan: J. Vac. Sci. & Technol. B4 (1986) 1336.
3. N. E. Christensen: Phys. Rev. B42 (1990) 7148.
4. D. Leong, M. Harry, K. J. Resson and K. P. Homewood: Nature 387 (1997) 686.
5. K. Lefki and P. Muret: J. Appl. Phys. 74 (1993) 1138.
6. T. Takada, H. Katsumata, Y. Makita, N. Kobayashi, H. Hasegawa and S. Uekusa: Mater. Res. Soc. Symp. Proc. 478 (1997) 267.
7. P. Muret and I. Ali: J. Vac. Sci. & Technol. B16 (1998) 1663.
8. C. A. Dimitriadis, J. H. Werner, S. Logothetidis, M. Stutzmann, J. Weber and R. Nesper: J. Appl. Phys. 68 (1990) 1726.
9. J. L. Regolini, F. Trincal, I. Sagnes, Y. Shapira, G. Bremond and D. Bensahel: IEEE Trans. Electron Devices 39 (1992) 200.
10. K. Radermacher, R. Carius and S. Mantl: Nucl. Instrum. Method. Phys. Res. B84 (1994) 163.
11. M. Tanaka, Y. Kumagai, T. Suemasu and F. Hasegawa: Jpn. J. Appl. Phys. 36 (1997) 3620.
12. T. Suemasu, M. Tanaka, T. Fujii, S. Hashimoto, Y. Kumagai and F. Hasegawa: Jpn. J. Appl. Phys. 36 (1997) L1225.
13. T. Suemasu, N. Hiroi, T. Fujii, K. Takakura and F. Hasegawa: Jpn. J. Appl. Phys. 38 (1999) L878.
14. M. Komabayashi, K. Hijikata and S. Ido: Jpn. J. Appl. Phys. 30 (1991) 331.
15. T. Suemasu, Y. Iikura, T. Fujii, K. Takakura, N. Hiroi and F. Hasegawa: Jpn. J. Appl. Phys. 38 (1999) L620.
16. P. Hacke, A. Maekawa, N. Koide, K. Hiramatsu and N. Sawaki: Jpn. J. Appl. Phys. 33 (1994) 6443.