High-resolution transmission electron microscopy study of interface structure and strain in epitaxial β-FeSi2 on Si (1 1 1) substrate

Journal of Crystal Growth

Volumn 255, Issue 1-2, 2003, Pages 93-101

  Han, Ming ^a   Tanaka, Miyoko ^a   Takeguchi, Masaki ^a   Zhang, Qi ^a   Furuya, Kazuo ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

A1. Interfaces; A1. Line defects; A3. Molecular beam epitaxy; B2. Semiconducting silicon compounds

Indexed keywords

ANNEALING; CRYSTAL LATTICES; DEPOSITION; DISLOCATIONS (CRYSTALS); HIGH RESOLUTION ELECTRON MICROSCOPY; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; STRAIN; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM;

LINE DEFECTS;

SEMICONDUCTING SILICON;

EID: 0038378850     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01240-5     Document Type: Article

References (36)

1. Bost M.C., Mahan J.E. J. Appl. Phys. 58:1985;2696.
2. Arushanov E., Bucher E., Kloc Ch., Kulikova O., Kulyuk L., Siminel A. Phys. Rev. B. 52:1995;20.
3. Bost M.C., Mahan J.E. J. Appl. Phys. 58:1985;2696.
4. Gerthsen D., Radermacher K., Dieker Ch., Mantl S. J. Appl. Phys. 71:1992;3788.
5. Spinella C., Coffa S., Bongiorno C., Pannitteri S., Grimaldi M.G. Appl. Phys. Lett. 76:2000;173.
6. Jedrecy N., Zheng Y., Waldhauer A., Sauvagesimkin M., Pinchaux R. Phys. Rev. B. 48:1993;8801.
7. Rizzi A., Rosen B.N.E., Freundt D., Dieker C., Luth H. Phys. Rev. B. 51:1995;17780.
8. Natoli J.Y., Berbezier I., Derrien J. Appl. Phys. Lett. 65:1994;1439.
9. Gay J.M., Stocker P., Rethore F. J. Appl. Phys. 73:1993;8169.
10. Rizzi A., Rosen B.N.E., Freundt D., Dieker Ch., Luth H., Gerthsen D. Phys. Rev. B. 51:1995;17780.
11. Sirringhaus H., Onda N., Muller-Gubler E., Stalder R., von Kanel H. Phys. Rev. B. 47:1993;10567.
12. Oostra D.J., Vandenhoubt D.E.W., Bulle-Lieuwma C.W.T., Naburgh E.P. Appl. Phys. Lett. 59:1991;1737.
13. Sauvage-Simkin M., Jedrecy N., Waldhauer A., Pinchaux R. Physica B. 198:1994;48.
14. Leong D., Harry M., Reeson K.J., Homewood K.P. Nature. 387:1997;686.
15. Suemasu T., Negishi Y., Takakura K., Hasegawa F. Jpn. J. Appl. Phys. 39:2000;1013.
16. Suemasu T., Negishi Y., Takakura K., Hasegawa F. Appl. Phys. Lett. 79:2001;1804.
17. Spinella C., Coffa S., Bongiorno C., Pannitteri S., Grimaldi M.G. Appl. Phys. Lett. 76:2000;173.
18. Schuller B., Carius R., Mantl S. Microelectron. Eng. 55:2001;219.
19. Leong D.N., Harry M.A., Reeson K.J., Homewood K.P. Appl. Phys. Lett. 68:1996;1649.
20. Christensen N.E. Phys. Rev. B. 42:1990;7148.
21. Clark S.J., Al-Allak H.M., Brand S., Abram R.A. Phys. Rev. B. 58:1998;10389.
22. Migas D.B., Miglio Leo Phys. Rev. B. 62:2000;11063.
23. Matthews J.W. Epitaxial Growth Part B. 1975;Academic, New York.
24. Fritz I.J. Appl. Phys. Lett. 51:1987;1080.
25. Pople R., Bean J.C. Appl. Phys. Lett. 47:1985;322.
26. Dodson B.W., Tsao J.Y. Appl. Phys. Lett. 51:1987;1325.
27. Kamat S.V., Hirth J.P. J. Appl. Phys. 67:1990;6844.
28. Gemelli M., Miglio L. Thin Solid Films. 380:2000;282.
29. Tanaka M., Furuya K., Takeguchi M., Honda T. Thin Solid Films. 319:1998;110.
30. Takeguchi M., Tanaka M., Yasuda H., Furuya K. Surf. Interface Anal. 31:2001;68.
31. Lin C.L., Wang L.W., Chen X.D., Chen L.F., Wang L.M. Jpn. J. Appl. Phys. 37:1998;623.
32. Russ J.C. The Image Processing Handbook. 2nd Edition:1995;Chemical Rubber Corp. Boca Raton, FL.
33. Fujii T., Nakazawa H., Kato M., Dahmen U. Acta Mater. 48:2000;1033.
34. D. Shindo, K. Hiraga, High-Resolution Electron Microscopy for Materials Science, Springer, Tokyo, 1998, p. 42.
35. Dahmen U. Scripta Metall. 21:1987;1029.
36. J.M. Howe, Interfaces in Materials, Wiley, New York, 1997, p. 430.