Channel engineering and junction overlap issues for ultra-shallow junctions formed by SPER in the 45 nm CMOS technology node

Materials Research Society Symposium - Proceedings

Volumn 810, Issue , 2004, Pages 455-460

  Severi, Simone ^a,b   Henson, Kirklen ^a   Lindsay, Richard ^a   Lauwers, Anne ^a   Pawlak, Bartek J ^c   Surdeanu, Radu ^c   De Meyer, K ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; DOPING (ADDITIVES); EPITAXIAL GROWTH; LEAKAGE CURRENTS; RECRYSTALLIZATION (METALLURGY); SEMICONDUCTOR JUNCTIONS; TRANSMISSION ELECTRON MICROSCOPY;

JUNCTION OVERLAP; SHALLOW TRENCH ISOLATION (STI); SHORT CHANNEL EFFECTS (SCE); SOLID PHASE EPITAXIAL REGROWTH (SPER); SPIKES;

CMOS INTEGRATED CIRCUITS;

EID: 5544278843     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-810-c10.5     Document Type: Conference Paper

References (5)

1. R. Lindsay et al., J. Vac. Sci. Technol. B 22, 306 (2004).
2. B. J. Pawlak et al., J. Vac. Sci. Technol. B 22, 297 (2004).
3. R. Angelucci et al., J. Electrochem. Soc., vol. 134, no. 12, December 1987, p. 3130-3134.
4. R.B.Fair, J.Electrochem. Soc., vol. 137, no. 2, August 1990, p. 667-671.
5. S. Severi et al., ULIS'2003 Proceedings.