Nonuniformities of electrical resistivity in undoped 6H-SiC wafers

Journal of Applied Physics

Volumn 97, Issue 11, 2005, Pages

  Li, Q ^a   Polyakov, A Y ^a   Skowronski, M ^a   Sanchez, E K ^b   Loboda, M J ^b   Fanton, M A ^c   Bogart, T ^c   Gamble, R D ^c  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b DOW CHEMICAL COMPANY   (United States)

^c PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ELEMENTAL ANALYSIS; DEEP-LEVEL TRANSIENT SPECTROSCOPY; HALL MEASUREMENTS; SEMI-INSULATING SILICON WAFERS;

CHEMICAL ANALYSIS; CONCENTRATION (PROCESS); CRYSTAL GROWTH; DOPING (ADDITIVES); ELECTRON TRAPS; HALL EFFECT; PARAMAGNETIC RESONANCE; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS; SINGLE CRYSTALS; SPECTROSCOPIC ANALYSIS;

ELECTRIC CONDUCTIVITY;

EID: 20744453248     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1921340     Document Type: Article

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