Electrical and multifrequency EPR study of nonstoichiometric defects in 4H-SiC

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 156-159

  Kalabukhova, E N ^a   Lukin, S N ^a   Savchenko, D V ^a   Mitchel, W C ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

EPR; Hall effect; Intrinsic defects; Semi insulating SiC

Indexed keywords

CARBON; ELECTRIC EXCITATION; ELECTRONIC STRUCTURE; ENERGY GAP; HALL EFFECT; HYDROGEN BONDS; NITROGEN; PARAMAGNETIC RESONANCE; SILICON WAFERS; VAPOR PHASE EPITAXY;

INTRINSIC DEFECTS; NONSTOICHIOMETRIC DEFECTS;

SILICON CARBIDE;

EID: 0347764792     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.047     Document Type: Conference Paper

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