SCOPUS 정보 검색 플랫폼

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 12-15, 2005, Pages

Epitaxial lateral overgrowth of high Al composition AlGaN alloys on deep grooved SiC substrates

(10) Heikman, Sten a Keller, Stacia a Newman, Scott a Wu, Yuan a Moe, Craig a Moran, Brendan a Schmidt, Mathew a Mishra, Umesh K a Speck, James S a Denbaars, Steven P a

a UNIVERSITY OF CALIFORNIA (United States)

Author keywords

Aluminum gallium nitride; Aluminum nitride; Epitaxial lateral overgrowth; Metalorganic chemical vapor deposition; Threading dislocations; Transmission electron microscopy

Indexed keywords

ALUMINUM; ALUMINUM NITRIDE; AMMONIA; ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINIUM GALLIUM NITRIDE; BOND ENERGY; EPITAXIAL LATERAL OVERGROWTH; THREADING DISLOCATIONS (TD);

ALUMINUM ALLOYS;

EID: 20444467370 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.44.L405 Document Type: Article

Times cited : (41)

References (24)

1
- 36549091170
- Y. Koide, H. Itoh, M. R. H. Khan, K. Hiramatu, N. Sawaki and I. Akasaki: J. Appl. Phys. 61 (1987) 4540.
- (1987) J. Appl. Phys. , vol.61 , pp. 4540
- Koide, Y.¹ Itoh, H.² Khan, M.R.H.³ Hiramatu, K.⁴ Sawaki, N.⁵ Akasaki, I.⁶

2
- 20444445513
- article no. 8
- M. D. Bremser, W. G. Perry, T. Zheleva, N. V. Edwards, O. H. Nam, N. Parikh, D. E. Aspnes and Robert F. Davis: MRS Internet J. Nitride Semicond. Res. 1 (1996) article no. 8.
- (1996) MRS Internet J. Nitride Semicond. Res. , vol.1
- Bremser, M.D.¹ Perry, W.G.² Zheleva, T.³ Edwards, N.V.⁴ Nam, O.H.⁵ Parikh, N.⁶ Aspnes, D.E.⁷ Davis, R.F.⁸

3
- 0034294415
- B. Yang, D. J. H. Lambert, T. Li, C. J. Collins, M. M. Wong, U. Chowdhury, R. D. Dupuis and J. C. Campbell: Electron. Lett. 36 (2000) 1866.
- (2000) Electron. Lett. , vol.36 , pp. 1866
- Yang, B.¹ Lambert, D.J.H.² Li, T.³ Collins, C.J.⁴ Wong, M.M.⁵ Chowdhury, U.⁶ Dupuis, R.D.⁷ Campbell, J.C.⁸

4
- 0003685207
- INSPEC, London
- Properties of Group III Nitrides, ed. J. H. Edgar (INSPEC, London, 1994) p. 74.
- (1994) Properties of Group III Nitrides , pp. 74
- Edgar, J.H.¹

5
- 1842736166
- T. Detchprohm, S. Sano, S. Mochizuki, S. Kamiyama, H. Amano and I. Akasaki: Phys. Status Solidi A 188 (2001) 799.
- (2001) Phys. Status Solidi A , vol.188 , pp. 799
- Detchprohm, T.¹ Sano, S.² Mochizuki, S.³ Kamiyama, S.⁴ Amano, H.⁵ Akasaki, I.⁶

6
- 0032048780
- N. G. Weimann, L. F. Eastman, D. Doppalapudi and H. M. Ng. T. D. Moustakas: J. Appl. Phys. 83 (1998) 3656.
- (1998) J. Appl. Phys. , vol.83 , pp. 3656
- Weimann, N.G.¹ Eastman, L.F.² Doppalapudi, D.³ Ng, H.M.⁴ Moustakas, T.D.⁵

7
- 0000926633
- D. C. Look and J. R. Sizelove: Phys. Rev. Lett. 82 (1999) 1237.
- (1999) Phys. Rev. Lett. , vol.82 , pp. 1237
- Look, D.C.¹ Sizelove, J.R.²

8
- 0033229371
- M. Albrecht, A. Cremades, J. Krinke, S. Christiansen, O. Ambacher, J. Piqueras, H. P. Strunk and M. Stutzmann: Phys. Status Solidi B 216 (1999) 409.
- (1999) Phys. Status Solidi B , vol.216 , pp. 409
- Albrecht, M.¹ Cremades, A.² Krinke, J.³ Christiansen, S.⁴ Ambacher, O.⁵ Piqueras, J.⁶ Strunk, H.P.⁷ Stutzmann, M.⁸

9
- 85042807979
- T. Sugahara, H. Sato, M. Hao, Y. Naoi, S. Kurai, S. Tottori, K. Yamashita, K. Nishino, L. T. Romano and S. Sakai: Jpn. J. Appl. Phys. 37 (1998) L398.
- (1998) Jpn. J. Appl. Phys. , vol.37
- Sugahara, T.¹ Sato, H.² Hao, M.³ Naoi, Y.⁴ Kurai, S.⁵ Tottori, S.⁶ Yamashita, K.⁷ Nishino, K.⁸ Romano, L.T.⁹ Sakai, S.¹⁰

10
- 1942425122
- M. Iwaya, S. Terao, T. Sano, S. Takanami, T. Ukai, R. Nakamura, S. Kamiyama, H. Amano and I. Akasaki: Phys. Status Solidi A 188 (2001) 117.
- (2001) Phys. Status Solidi A , vol.188 , pp. 117
- Iwaya, M.¹ Terao, S.² Sano, T.³ Takanami, S.⁴ Ukai, T.⁵ Nakamura, R.⁶ Kamiyama, S.⁷ Amano, H.⁸ Akasaki, I.⁹

11
- 0031187047
- A. Usui, H. Sunakawa, A. Sakai and A. Yamaguchi: Jpn. J. Appl. Phys. 36 (1997) L899.
- (1997) Jpn. J. Appl. Phys. , vol.36
- Usui, A.¹ Sunakawa, H.² Sakai, A.³ Yamaguchi, A.⁴

12
- 0032620385
- K. J. Linthicum, T. Gehrke, D. B. Thomson, E. Carlson, P. Rajagopal, T. Smith, A. D. Batchelor and R. F. Davis: Appl. Phys. Lett. 75 (1999) 196.
- (1999) Appl. Phys. Lett. , vol.75 , pp. 196
- Linthicum, K.J.¹ Gehrke, T.² Thomson, D.B.³ Carlson, E.⁴ Rajagopal, P.⁵ Smith, T.⁶ Batchelor, A.D.⁷ Davis, R.F.⁸

13
- 2542503617
- and references therein
- P. Gibart: Rep. Prog. Phys. 67 (2004) 667 and references therein.
- (2004) Rep. Prog. Phys. , vol.67 , pp. 667
- Gibart, P.¹

14
- 0001236278
- C. I. H. Ashby, C. C. Mitchell, J. Han, N. A. Missert, P. P. Provencio, D. M. Follstaedt, G. M. Peake and L. Griego: Appl. Phys. Lett. 77 (2000) 3233.
- (2000) Appl. Phys. Lett. , vol.77 , pp. 3233
- Ashby, C.I.H.¹ Mitchell, C.C.² Han, J.³ Missert, N.A.⁴ Provencio, P.P.⁵ Follstaedt, D.M.⁶ Peake, G.M.⁷ Griego, L.⁸

15
- 79956029123
- D. M. Follstaedt, P. P. Provencio, N. A. Missert, C. C. Mitchell, D. D. Koleske, A. A. Allermann and C. I. H. Ashby: Appl. Phys. Lett. 81 (2002) 2758.
- (2002) Appl. Phys. Lett. , vol.81 , pp. 2758
- Follstaedt, D.M.¹ Provencio, P.P.² Missert, N.A.³ Mitchell, C.C.⁴ Koleske, D.D.⁵ Allermann, A.A.⁶ Ashby, C.I.H.⁷

16
- 0032092588
- S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano and K. Chocho: J. Cryst. Growth 189/190 (1998) 820.
- (1998) J. Cryst. Growth , vol.189-190 , pp. 820
- Nakamura, S.¹ Senoh, M.² Nagahama, S.³ Iwasa, N.⁴ Yamada, T.⁵ Matsushita, T.⁶ Kiyoku, H.⁷ Sugimoto, Y.⁸ Kozaki, T.⁹ Umemoto, H.¹⁰ Sano, M.¹¹ Chocho, K.¹²

17
- 0031142401
- O. H. Nam, M. D. Bremser, B. L. Ward, R. J. Nemanich and R. F. Davis: Jpn. J. Appl. Phys. 36 (1997) L532.
- (1997) Jpn. J. Appl. Phys. , vol.36
- Nam, O.H.¹ Bremser, M.D.² Ward, B.L.³ Nemanich, R.J.⁴ Davis, R.F.⁵

18
- 20444458358
- R. F. Davis, T. Gehrke, K. J. Linthicum, P. Rajagopal, A. M. Roskowski, T. Zheleva, E. A. Preble, C. A. Zorman, M. Mehregany, U. Schwarz, J. Schuck and R. Grober: MRS Internet J. Nitride Semicond. Res. 6 (2001) 1.
- (2001) MRS Internet J. Nitride Semicond. Res. , vol.6 , pp. 1
- Davis, R.F.¹ Gehrke, T.² Linthicum, K.J.³ Rajagopal, P.⁴ Roskowski, A.M.⁵ Zheleva, T.⁶ Preble, E.A.⁷ Zorman, C.A.⁸ Mehregany, M.⁹ Schwarz, U.¹⁰ Schuck, J.¹¹ Grober, R.¹²

19
- 3042777497
- T. M. Katona, P. Cantu, S. Keller, Y. Wu, J. S. Speck and S. P. DenBaars: Appl. Phys. Lett. 84 (2004) 5025.
- (2004) Appl. Phys. Lett. , vol.84 , pp. 5025
- Katona, T.M.¹ Cantu, P.² Keller, S.³ Wu, Y.⁴ Speck, J.S.⁵ Denbaars, S.P.⁶

20
- 0000674499
- X. Zhang, P. D. Dapkus and D. H. Rich: Appl. Phys. Lett. 77 (2000) 1496
- (2000) Appl. Phys. Lett. , vol.77 , pp. 1496
- Zhang, X.¹ Dapkus, P.D.² Rich, D.H.³

21
- 0001692226
- R. S. Q. Fareed, J. W. Yang, J. Zhang, V. Adivarahan, V. Chaturvedi and M. A. Khan: Appl. Phys. Lett. 77 (2000) 2343.
- (2000) Appl. Phys. Lett. , vol.77 , pp. 2343
- Fareed, R.S.Q.¹ Yang, J.W.² Zhang, J.³ Adivarahan, V.⁴ Chaturvedi, V.⁵ Khan, M.A.⁶

22
- 21544482023
- X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller P. M. Petroff, S. P. DenBaars and J. S. Speck: Appl. Phys. Lett. 72 (1998) 692.
- (1998) Appl. Phys. Lett. , vol.72 , pp. 692
- Wu, X.H.¹ Elsass, C.R.² Abare, A.³ Mack, M.⁴ Keller, S.⁵ Petroff, P.M.⁶ Denbaars, S.P.⁷ Speck, J.S.⁸

23
- 0033882278
- P. Fini, H. Marchand, J. P. Ibbetson, S. P. DenBaars, U. K. Mishra and J. S. Speck: J. Cryst. Growth 209 (2000) 581.
- (2000) J. Cryst. Growth , vol.209 , pp. 581
- Fini, P.¹ Marchand, H.² Ibbetson, J.P.³ Denbaars, S.P.⁴ Mishra, U.K.⁵ Speck, J.S.⁶

24
- 0032094525
- X. H. Wu, P. Fini, E. J. Tarsa, B. Heying, S. Keller, U. K. Mishra, S. P. DenBaars and J. S. Speck: J. Cryst. Growth 189/190 (1998) 231.
- (1998) J. Cryst. Growth , vol.189-190 , pp. 231
- Wu, X.H.¹ Fini, P.² Tarsa, E.J.³ Heying, B.⁴ Keller, S.⁵ Mishra, U.K.⁶ Denbaars, S.P.⁷ Speck, J.S.⁸

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.