Growth Mechanism and Characterization of Low-Dislocation-Density AIGaN Single Crystals Grown on Periodically Grooved Substrates

Physica Status Solidi (A) Applied Research

Volumn 188, Issue 2, 2001, Pages 799-802

  Detchprohm, T ^a   Sano, S ^a   Mochizuki, S ^a   Kamiyama, S ^a   Amano, H ^a   Akasaki, I ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 1842736166     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200112)188:2<799::AID-PSSA799>3.0.CO;2-4     Document Type: Article

References (9)

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8. T. DETCHPROHM, M. YANO, S. SANO, R. NAKAMURA, S. MOCHIZUKI, T. NAKAMURA, H. AMANO, and I. AKASAKI, Mater. Res. Soc. Symp. Proc. G5.7 (2000), accepted.
9. S. HAFFOUZ, B. BEAUMONT, and P. GIBART, MRS Internet J. Nitride Semicond. Res. 3, 8 (1998).