Imaging of oxide charges and contact potential difference fluctuations in atomic layer deposited Al 2 O 3 on Si

Journal of Applied Physics

Volumn 97, Issue 6, 2005, Pages

  Sturm, J M ^a   Zinine, A I ^a   Wormeester, H ^a   Poelsema, Bene ^a   Bankras, R G ^a   Holleman, J ^a   Schmitz, J ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION (ALD); CONTACT POTENTIAL DIFFERENCE (CPD); OXIDE CHARGES; TRIMETHYLALUMINUM (TMA);

ALUMINA; ATOMIC FORCE MICROSCOPY; CAPACITANCE; DEMODULATORS; ELECTRIC POTENTIAL; FREQUENCY MODULATION; IMAGING TECHNIQUES; MATHEMATICAL MODELS; NITRIC ACID; OXIDES; SILICA; SILICON;

DEPOSITION;

EID: 20444447518     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1870113     Document Type: Article

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