Factors influencing the capacitance-voltage characteristics measured by the scanning capacitance microscope

Journal of Applied Physics

Volumn 94, Issue 4, 2003, Pages 2680-2685

  Buh, G H ^a,c   Kopanski, J J ^a   Marchiando, J F ^a   Birdwell, A G ^a   Kuk, Y ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b Seoul National University   (South Korea)

^c SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE MEASUREMENT; DOPING (ADDITIVES); SPECTROSCOPIC ANALYSIS; VOLTAGE MEASUREMENT;

STRAY LIGHTS;

MOS DEVICES;

EID: 0041421193     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1592295     Document Type: Article

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