Optimization of thin, nitrogen-rich silicon oxynitrides grown by rapid thermal nitridation

Journal of the Electrochemical Society

Volumn 152, Issue 5, 2005, Pages

  Ludsteck, A ^a   Schulze, J ^a   Eisele, I ^a   Dietl, W ^b   Chung, H ^b   Nenyei, Z ^b   Bergmaier, A ^c   Dollinger, G ^c  

^a BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^b MATTSON THERMAL PRODUCTS GMBH   (United States)

^c TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; FIELD EFFECT TRANSISTORS; MOS CAPACITORS; NITRIDES; OXIDATION; SUBSTRATES; THIN FILMS;

INTERFACE PROPERTIES; OXYNITRIDES; THERMAL NITRIDATION; THERMAL PROCESSING;

SILICON COMPOUNDS;

EID: 20444369506     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1872652     Document Type: Article

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