Thermally grown and reoxidized nitrides as alternative gate dielectrics

Materials Research Society Symposium - Proceedings

Volumn 786, Issue , 2003, Pages 245-250

  Ludsteck, Alexandra ^a   Dietl, Waltraud ^b   Chung, Hinyiu ^b   Schulze, Joerg ^a   Nenyei, Zsolt ^b   Eisele, Ignaz ^a  

^a BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^b MATTSON THERMAL PRODUCTS GMBH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; BORON; DIFFUSION; ELECTRODES; INTERFACES (MATERIALS); LEAKAGE CURRENTS; NITRIDES; NITROGEN; OXIDATION; PARTIAL PRESSURE; PERMITTIVITY; SILICA;

GATE DIELECTRICS; OXYNITRIDES; RAPID THERMAL NITRIDATION; REOXIDIZED NITRIDES;

DIELECTRIC MATERIALS;

EID: 2442628412     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-786-e3.14     Document Type: Conference Paper

References (16)

1. ITRS, International Technology Roadmap for Semiconductors, Update 2002
2. th Edition, pp.207-213
3. T.M. Pan, T.F. Lei, H.C. Wen and T.S. Chao, IEEE Trans. Electron Devices, vol. 48, no. 5, pp. 907-912, 2001
4. Y. Wu, G. Lucovsky and Y.-M. Lee, IEEE Trans. Electron Devices, vol. 47, no. 7, pp. 1361-1369, 2000
5. W.H. Lin, K.L. Pey, Z. Dong, S. Y.-M. Choi, M.S. Zhou, T.C. Ang, C.H. Ang, W.S. Lau and J.H. Ye, IEEE Electron Device Lett., vol. 23, no. 3, pp. 124-126, 2002
6. K.A. Ellis and R.A. Buhrman, IBM J. Res. Develop., Vol. 43, no. 3, pp. 287-300, 1999
7. P.T. Lai, J.P. Xu and Y.C. Cheng, IEEE Trans. Electron Devices, vol. 46, no. 12, pp. 2311-2314, 1999
8. T. Hori, H. Iwasaki and K. Tsuji, IEEE Trans. Electron Devices, vol. 36, no. 2, pp. 340-350, 1989
9. H.N. Al-Shareef, A. Karamcheti, T.Y. Luo, G. Bersuker, G.A. Brown, R.W. Murto, M.D. Jackson, H.R. Huff, P. Kraus, D. Lopes, C. Olsen and G. Miner, Appl. Phys. Lett., vol. 78, no. 24, pp. 3875-3877, 2001
10. S.F. Ting, Y.K. Fang, C.H. Chen, C.W. Wang, W.T. Hsieh, J.J. Ho, M.C. Yu, S.M. Jang, C.H. Yu, M.S. Liang, S. Chen and R. Shih, IEEE Electron Device Lett., vol. 22, no. 7, pp. 327-329, 2001
11. J.R. Brews, Solid-State Electronics, Vol. 26,no. 8, pp. 711-716, 1983
12. ©2000, NCSU Software, Version 5.0, Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC
13. th IEEE International Conference on Advanced Thermal Processing of Semiconductors - RTP 2002, Vancouver, Canada, 11 (2002)
14. A. Chin, Y.H. Wu, S.B. Chen, C.C. Liao and W.J. Chen, Symp. on VLSI Tech., 2000
15. S. Guha, E. Cartier, N.A. Bojarczuk, J. Bruley, L. Gignac and J. Karasinski, J. Appl. Phys., Vol. 90, no. 1, pp. 512-514, 2001
16. A. Stadler, I. Genchev, A. Bergmaier, G. Dollinger, V. Petrova-Koch, W. Hansch, H. Baumgǎrtner, I. Eisele, Microelectronics Reliability, 41, pp. 977-980, 2001