Nitrogen implantations for rapid thermal oxinitride layers

Microelectronics Reliability

Volumn 41, Issue 7, 2001, Pages 977-980

  Stadler, A ^a   Genchev, I ^b   Bergmaier, A ^b   Dollinger, G ^b   Petrova Koch, V ^b   Mansch, W ^b   Baumgartner H ^a   Eisele, I ^a  

^a BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; INTERFACES (MATERIALS); ION IMPLANTATION; NITROGEN; OXIDATION; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES;

FOWLER-NORDHEIM TUNNELING CURRENTS;

ULSI CIRCUITS;

EID: 0035391288     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00051-8     Document Type: Article

References (6)