Characteristics of GaN/Si(1 1 1) epitaxy grown using Al0.1Ga0.9N/AlN composite nucleation layers having different thicknesses of AlN

Journal of Crystal Growth

Volumn 241, Issue 3, 2002, Pages 289-296

  Jang, Seong Hwan ^a   Lee, Seung Jae ^a   Seo, In Seok ^a   Ahn, Haeng Keun ^a   Lee, Oh Yeon ^a   Leem, Jae Young ^b   Lee, Cheul Ro ^a  

^a Chonbuk National University   (South Korea)

^b Inje University   (South Korea)

Author keywords

A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III V materials

Indexed keywords

DISLOCATIONS (CRYSTALS); ETCHING; LATTICE CONSTANTS; NUCLEATION; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SPECTRUM ANALYSIS; SURFACE TOPOGRAPHY; THERMAL EXPANSION;

COMPOSITE NUCLEATION LAYERS (CNL);

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0036606726     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01308-8     Document Type: Article

References (13)