SCOPUS 정보 검색 플랫폼

Volumn 213, Issue 1, 2000, Pages 27-32

Deposition and crystallization of amorphous GaN buffer layers on Si(1 1 1) substrates

(12) Chen, P a Xie, S Y a Chen, Z Z a Zhou, Y G a Shen, B a Zhang, R a Zheng, Y D a Zhu, J M a Wang, M a Wu, X S a Jiang, S S a Feng, D a

a NANJING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; CRYSTAL ORIENTATION; CRYSTALLIZATION; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SUBSTRATES;

GALLIUM NITRIDE; SOLID PHASE EPITAXY;

SEMICONDUCTING FILMS;

EID: 0033743134 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(00)00248-7 Document Type: Article

Times cited : (28)

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