Investigation of microstructure and V-defect formation in in xGa1-xN/GaN MQW grown using temperature-gradient metalorganic chemical vapor deposition

Journal of Electronic Materials

Volumn 34, Issue 5, 2005, Pages 605-611

  Johnson, M C ^a   Liliental Weber, Z ^a   Zakharov, D N ^a   Mccready, D E ^b   Jorgenson, R J ^c   Wu, J ^a   Shan, W ^a   Bourret Courchesne, E D ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^c Oriol Inc   (United States)

Author keywords

High resolution x ray diffraction (XRD); InGaN GaN; Metalorganic chemical vapor deposition (MOCVD); Transmission electron microscopy; V defects (pinholes)

Indexed keywords

CRYSTAL DEFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

HIGH-RESOLUTION X-RAY DIFFRACTION (XRD); INGAN/GAN; MICROSTRUCTURAL PROPERTIES; V DEFECTSS (PINHOLES);

SEMICONDUCTOR QUANTUM WELLS;

EID: 20344370479     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0072-y     Document Type: Conference Paper

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