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Volumn 230, Issue 3-4, 2001, Pages 351-356
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Enhanced two-dimensional growth of MOVPE InN films on sapphire (0 0 0 1) substrates
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Author keywords
A1. Crystal morphology; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting indium compounds
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Indexed keywords
CHEMICAL REACTORS;
FILM GROWTH;
METALLORGANIC VAPOR PHASE EPITAXY;
MORPHOLOGY;
NITRIDES;
SAPPHIRE;
SEMICONDUCTING INDIUM COMPOUNDS;
SUBSTRATES;
INDIUM NITRIDE;
SEMICONDUCTING FILMS;
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EID: 0035451693
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)01261-1 Document Type: Article |
Times cited : (19)
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References (8)
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