SiGe-on-Insulator and Ge-on-Insulator substrates fabricated by Ge-condensation technique for high-mobility channel CMOS devices

Materials Research Society Symposium Proceedings

Volumn 809, Issue , 2004, Pages 65-75

  Tezuka, Tsutomu ^a   Mizuno, Tomohisa ^a   Sugiyama, Naoharu ^a   Nakaharai, Shu ^a   Moriyama, Yoshihiko ^a   Usuda, Koji ^a   Numata, Toshinori ^a   Hirashita, Norio ^a   Maeda, Tatsuro ^b   Takagi, Shin Ichi ^b   Yoshiji, Miyamura ^c   Toyoda, Eiji ^d  

^a TOSHIBA CORPORATION   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c Komatsu Electronic Metals Co Ltd   (Japan)

^d Nissei Bldg   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPRESSIVE STRESS; CONDENSATION; DIFFUSION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; HOLE MOBILITY; INTERFACES (MATERIALS); OXIDATION; RAMAN SPECTROSCOPY; SEMICONDUCTING GERMANIUM; SURFACE ROUGHNESS;

GERMANIUM-ON-INSULATOR (GOI); OXIDATION PROCESS; PROCESS FLOW; THERMAL OXIDATION;

SILICON ON INSULATOR TECHNOLOGY;

EID: 19944432222     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-809-b2.1     Document Type: Conference Paper

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