Evaluation of dislocation density of SiGe-on-insulator substrates using enhanced secco etching method

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 7 A, 2003, Pages 4476-4479

  Sugiyama, Naoharu ^a   Moriyama, Yoshihiko ^a   Tezuka, Tsutomu ^a   Mizuno, Tomohisa ^a   Nakaharai, Shu ^a   Usuda, Koji ^a   Takagi, Sin Ichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

HF defect; SGOI; SiGe; SOI; Strained silicon

Indexed keywords

CONDENSATION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; ETCHING; SEMICONDUCTING GERMANIUM; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

DISLOCATION DENSITY; ENHANCED SECCO ETCHING; SILICON GERMANIUM ON INSULATOR SUBSTRATES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0141494581     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.4476     Document Type: Article

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