Nanoscale ultra-thin-body silicon-on-insulator P-MOSFET with a SiGe/Si heterostructure channel

IEEE Electron Device Letters

Volumn 21, Issue 4, 2000, Pages 161-163

  Yeo, Yee Chia ^a   Subramanian, Vivek ^a   Kedzierski, Jakub ^a   Xuan, Peiqi ^a   King, Tsu Jae ^a   Bokor, Jeffrey ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; ELECTRIC CURRENTS; ETCHING; HETEROJUNCTIONS; OXIDATION; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; THRESHOLD VOLTAGE;

SHORT CHANNEL EFFECTS; SILICON GERMANIUM HETEROSTRUCTURE CHANNEL; SINGLE CRYSTALLINE CHANNEL; SOLID PHASE EPITAXY; ULTRATHIN BODY;

MOSFET DEVICES;

EID: 0033901411     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.830968     Document Type: Article

References (7)

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