Critical RF damage conditions for the plasma-assisted molecular beam epitaxy growth of GaInNAs with dilute N2/Ar gas mix

Journal of Crystal Growth

Volumn 280, Issue 1-2, 2005, Pages 7-15

  Reifsnider, Jason M ^a   Oye, Michael M ^a   Govindaraju, Sridhar ^a   Holmes Jr , Archie L ^a  

^a The University of Texas at Austin   (United States)

Author keywords

A3. Molecular beam epitaxy; A3. Quantum wells; B1. Nitrides; B2. Semiconducting gallium arsenide; B2. Semiconducting gallium compounds; B3. Semiconducting III V materials

Indexed keywords

ARGON; GASES; INDIUM; MOLECULAR BEAM EPITAXY; NITRIDES; PLASMAS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

CHAMBER PRESSURE; GAS FLOW RATE; GAS MIX; SEMICONDUCTING III-V MATERIALS;

GALLIUM COMPOUNDS;

EID: 19944365218     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.03.003     Document Type: Article

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