Improved quality GaN films grown by molecular beam epitaxy on sapphire

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 3, 1998, Pages 1278-1281

  Reifsnider, J M ^a   Gotthold, D W ^a   Holmes Jr , A L ^a   Streetman, B G ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002766027     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589999     Document Type: Article

References (9)

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