Deep-level defects in InGaAsN grown by molecular-beam epitaxy

Applied Physics Letters

Volumn 80, Issue 25, 2002, Pages 4777-4779

  Kaplar, R J ^a   Ringel, S A ^a   Kurtz, Steven R ^b   Klem, J F ^b   Allerman, A A ^b  

^a Ohio State University   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR; DEEP ELECTRON TRAPS; DEEP HOLE TRAP; DEEP LEVEL; DEEP-LEVEL DEFECTS; DEFECT DISTRIBUTION; DISCRETE ENERGY LEVELS; ELECTRON LEVELS; GROWTH TECHNIQUES; INGAASN; METAL-ORGANIC; MINORITY-CARRIER ELECTRONS; N-TYPE MATERIALS; P-TYPE;

DEFECTS; ELECTRON TRAPS; ENERGY GAP; EPITAXIAL GROWTH; HOLE TRAPS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAMS;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 79956048795     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1483912     Document Type: Article

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