Use of optical emission intensity to characterize an RF plasma source for MBE growth of GaAsN

Journal of Crystal Growth

Volumn 243, Issue 3-4, 2002, Pages 396-403

  Reifsnider, Jason M ^a   Govindaraju, Sridhar ^a   Holmes Jr , Archie L ^a  

^a The University of Texas at Austin   (United States)

Author keywords

A2. Molecular beam epitaxy; B1 Nitrides; B2. Semiconducting gallium arsenide

Indexed keywords

FIBER OPTICS; LIGHT EMISSION; NITROGEN; OPTICAL COMMUNICATION; OPTIMIZATION; PLASMA SOURCES; SEMICONDUCTING GALLIUM ARSENIDE;

RADIO FREQUENCY (RF) PLASMA SOURCES;

MOLECULAR BEAM EPITAXY;

EID: 0036724144     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01559-2     Document Type: Article

References (9)

1. Growth of GaInNAs by Plasma Assisted Molecular beam epitaxy