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Volumn 243, Issue 2, 2002, Pages 261-266

The effects of concomitant In and N incorporation on the photoluminescence of GaInNAs

Author keywords

A1. Photoluminescence; A3. Molecular beam epitaxy; A3. Quantum wells; B2. III V semiconductors

Indexed keywords

ANNEALING; CRYSTAL IMPURITIES; EXCITONS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

EID: 0036680084     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01491-4     Document Type: Article
Times cited : (11)

References (23)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.