Time and temperature dependence on rapid thermal annealing of molecular beam epitaxy grown Ga0.8In0.2N0.01As0.99 Quantum wells analyzed using photoluminescence

Journal of Electronic Materials

Volumn 32, Issue 1, 2003, Pages 29-33

  Govindaraju, Sridhar ^a   Reifsnider, Jason M ^a   Oye, Michael M ^a   Holmes Jr , Archie L ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Annealing; GaInNAs; MBE; Photoluminescence; Quantum wells; Temperature; Time

Indexed keywords

MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM COMPOUNDS;

ANNEALING PARAMETERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037237024     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0249-1     Document Type: Article

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