Low-temperature silicon nitride for thin-film electronics on polyimide foil substrates

Applied Surface Science

Volumn 175-176, Issue , 2001, Pages 12-16

  Gleskova, H ^a   Wagner, S ^a   Gasparik V ^b   Kovac P ^c  

^a Princeton University   (United States)

^b Faculty of Natural Sciences   (Slovakia)

^c INSTITUTE OF CHEMISTRY   (Slovakia)

Author keywords

Low deposition temperature; Plasma enhanced chemical vapor deposition; Plastic substrates; Silicon nitride; Thin film transistors

Indexed keywords

AMMONIA; AMORPHOUS FILMS; AMORPHOUS SILICON; DIELECTRIC FILMS; ELECTRIC BREAKDOWN OF SOLIDS; ETCHING; FILM GROWTH; HYDROGEN; LOW TEMPERATURE PROPERTIES; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYIMIDES; REFRACTIVE INDEX; SILANES; THIN FILM TRANSISTORS;

DIELECTRIC BREAKDOWN;

SILICON NITRIDE;

EID: 0035873121     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00050-2     Document Type: Article

References (19)

1. Dun H., Pan P., White F.R., Douse R.W. J. Electrochem. Soc. 128:1981;1555.
2. Blaauw C. J. Electrochem. Soc. 131:1984;1114.
3. Richard P.D., Tsu D.V., Lucovsky G., Lin S.Y. J. Non-Cryst. Solids. 77-78:1985;925.
4. Kaganowicz G., Robinson J.W. J. Vac. Sci. Technol. A. 4:1986;1901.
5. Lee J.Y., Sooriakumar K., Dange M.M. Thin Solid Films. 203:1991;275.
6. Lee K.R., Sundaram K.B., Malocha D.C. J. Mater. Sci.: Mater. Electron. 5:1994;255.
7. Feng M.S., Liang C.W., Tseng D. J. Electrochem. Soc. 141:1994;1040.
8. Parsons G.N., Yang C.S., Arthur C.B., Klein T.M., Smith L. Mat. Res. Soc. Symp. Proc. 508:1998;19.
9. Farber D.G., Bae S., Okandan M., Reber D.M., Kuzma T., Fonash S. J. Electrochem. Soc. 146:1999;2254.
10. Sazonov A., Nathan A., Striakhilev D. J. Non-Cryst. Solids. 266-269:2000;1329.
11. Swanepoel R. J. Phys. E: Sci. Instrum. 16:1983;1214.
12. Buffered oxide etch, 10:1, with surfactant, CMOS grade; J.T. Baker Chemical Co., Phillipsburg, NJ ( http://www.jtbaker.com ); catalog number 5332-03.
13. Analysis performed by Evans East, Plainsboro, NJ.
14. Lustig N., Kanicky J. J. Appl. Phys. 65:1989;3951.
15. Jones B.L. J. Non-Cryst. Solids. 77-78:1985;957.
16. Kuo Y. J. Electrochem. Soc. 142:1995;186.
17. Cotler T.J., Chapple-Sokol J. J. Electrochem. Soc. 140:1993;2071.
18. Eugene Ma, Ph.D. thesis, Princeton University, 1999.
19. Gleskova H., Wagner S. IEEE Electron Dev. Lett. 20:1999;473.