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Journal of Materials Science: Materials in Electronics

Volumn 12, Issue 9, 2001, Pages 515-522

Bulk and interface properties of low-temperature silicon nitride films deposited by remote plasma enhanced chemical vapor deposition

(2) Park, Y B a Rhee, S W b

a SAMSUNG Electronics (South Korea)

b Pohang University of Science and Technology (POSTECH) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; HYDROGENATION; LOW TEMPERATURE EFFECTS; PARTIAL PRESSURE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SILICON NITRIDE; STOICHIOMETRY;

REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (REPCVD);

THIN FILMS;

EID: 0035455336 PISSN: 09574522 EISSN: None Source Type: Journal
DOI: 10.1023/A:1012449425744 Document Type: Article

Times cited : (67)

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