New evidence of dominant processing effects in standard and oxygenated silicon diodes after neutron irradiation

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 512, Issue 1-2, 2003, Pages 52-59

  Candelori, A ^a   Rando, R ^a   Bisello, D ^a   Campabadal, F ^b   Cindro, V ^c   Fonseca, L ^b   Kaminski, A ^a   Litovchenko, A ^b   Lozano, M ^b   Martinez C ^b   Moreno, A ^b   Rafi, J M ^b   Santander, J ^b   Ullan M ^b   Wyss, J ^d  

^a SEZIONE DI PADOVA   (Italy)

^b INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^c JO EF STEFAN INSTITUTE   (Slovenia)

^d Dipartimento di Meccanica   (Italy)

Author keywords

Neutron radiation damage; Radiation detectors; Semiconductor diodes

Indexed keywords

DIODES; NEUTRON IRRADIATION; OXYGEN; SILICON;

SILICON DIODES;

NUCLEAR INSTRUMENTATION;

EID: 19244369653     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(03)01876-X     Document Type: Conference Paper

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