A transmission electron microscopy study of microstructure evolution with increasing anneal temperature in Ti/Al ohmic contacts to n-GaN

Journal of Electronic Materials

Volumn 30, Issue 3, 2001, Pages L13-L16

  Bright, A N ^a   Tricker, D M ^a   Humphreys, C J ^a   Davies, R ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b Marconi Caswell Ltd   (United Kingdom)

Author keywords

GaN; N type; Ohmic contacts; TEM

Indexed keywords

ALUMINUM; ANNEALING; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE MEASUREMENT; GALLIUM NITRIDE; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); METALLOGRAPHIC MICROSTRUCTURE; TRANSMISSION ELECTRON MICROSCOPY;

MICROSTRUCTURE EVOLUTION; SPECIFIC CONTACT RESISTANCE;

TITANIUM;

EID: 0035272935     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-001-0030-2     Document Type: Letter

References (10)