Advances in HgCdTe-based infrared detector materials: The role of molecular-beam epitaxy

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4454, Issue , 2001, Pages 47-59

  De Lyon, Terry J ^a   Rajavel, Rajesh D ^a   Roth, John A ^a   Jensen, John E ^a   Olson, Gregory L ^a   Brewer, Peter D ^a   Hunter, Andrew T ^a   Williamson, Tod S ^a   Bailey, Steve L ^b   Buell, Aimee ^b   Chapman, George ^b   Childs, Alex C ^b   Gordon, Eli ^b   Jack, Mike ^b   Johnson, Scott M ^b   Kosai, Ken ^b   Maranowski, Kevin ^b   Patten, Elizabeth ^b   Peterson, Jeff ^b   Pham, Le ^b   Radford, Bill ^b   Randall, Valerie ^b   Varesi, John ^b   Wilson, Jerry ^b   more..

^a HLS LLC   (United States)

^b RAYTHEON COMPANY   (United States)

Author keywords

Avalanche photodiodes; Focal plane arrays; HgCdTe; Infrared detectors; MBE; Molecular beam epitaxy

Indexed keywords

COMPOSITION; FILM GROWTH; IMAGING SYSTEMS; INFRARED DETECTORS; INFRARED IMAGING; MOLECULAR BEAM EPITAXY; PHOTODIODES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

AVALANCHE PHOTODIODES; FOCAL PLANE ARRAYS; MERCURY CADMIUM TELLURIDE; SPECTRAL RANGES; THERMAL IMAGING SYSTEMS;

MERCURY COMPOUNDS;

EID: 18644384830     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.448189     Document Type: Article

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