Real-time monitoring and control of epitaxial semiconductor growth in a production environment by in situ spectroscopic ellipsometry

Thin Solid Films

Volumn 313-314, Issue , 1998, Pages 490-495

  Johs, B ^a   Herzinger, C ^a   Dinan, J H ^b   Cornfeld, A ^b   Benson, J D ^b   Doctor, D ^c   Olson, G ^c   Ferguson, I ^d   Pelczynski, M ^d   Chow, P ^e   Kuo, C H ^f   Johnson, S ^f  

^a J A WOOLLAM CO INC   (United States)

^b NIGHT VISION AND ELECTRONIC SENSORS DIRECTORATE   (United States)

^c Hughes Aircraft Co   (United States)

^d EMCORE CORPORATION   (United States)

^e SVT ASSOCIATES   (United States)

^f ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Ellipsometry; Epitaxial growth; HgCdTe; In situ characterization; InGaAs

Indexed keywords

DEPOSITION; ELLIPSOMETRY; EPITAXIAL GROWTH; MERCURY COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SPECTROSCOPIC ANALYSIS;

SPECTROSCOPIC ELLIPSOMETRY (SE);

SEMICONDUCTOR GROWTH;

EID: 4243262229     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00870-5     Document Type: Article

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