Misfit relaxation behavior in CdHgTe layers grown by molecular beam epitaxy on CdZnTe substrates

Journal of Electronic Materials

Volumn 29, Issue 6, 2000, Pages 687-690

  Skauli, T ^a   Colin, T ^a   Sjolie R ^a   Lovold S ^a  

^a NORWEGIAN DEFENCE RESEARCH ESTABLISHMENT FFI   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

DEFORMATION; DISLOCATIONS (CRYSTALS); ELASTICITY; ETCHING; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; RELAXATION PROCESSES; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

CADMIUM MERCURY TELLURIDE; CADMIUM ZINC TELLURIDE;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0033705779     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0206-1     Document Type: Article

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