Mode of arsenic incorporation in HgCdTe grown by MBE

Journal of Electronic Materials

Volumn 26, Issue 6, 1997, Pages 621-624

  Sivananthan, S ^a   Wijewarnasuriya, P S ^a   Aqariden, F ^a   Vydyanath, H R ^a,b   Zandian, M ^c   Edwall, D D ^c   Arias, J M ^c  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^b Avyd Devices   (United States)

^c Rockwell International   (United States)

Author keywords

Arsenic doping; HgCdTe; Molecular beam epitaxy (MBE); p type doping; Secondary ion mass spectrometry (SIMS)

Indexed keywords

EID: 0000478516     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0205-6     Document Type: Article

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