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Volumn 214, Issue , 2000, Pages 1100-1105

Status of HgCdTe-MBE technology for producing dual-band infrared detectors

(12) Rajavel, R D a Brewer, P D a Jamba, D M a Jensen, J E a LeBeau, C a Roth, J A a Williamson, W S a Bangs, J W b Goetz, P b Johnson, J L b Patten, E A b Wilson, J A b

a Hughes Aircraft Co (United States)

b RAYTHEON COMPANY (United States)

Author keywords

FPA; HgCdTe; In situ sensor; IR detector; MBE

Indexed keywords

ARRAYS; COMPOSITION; DISLOCATIONS (CRYSTALS); ELLIPSOMETRY; INFRARED DETECTORS; LIGHT ABSORPTION; OPTICAL SENSORS; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS;

FOCAL PLANE ARRAYS; SEMICONDUCTING MERCURY CADMIUM TELLURIDE;

MOLECULAR BEAM EPITAXY;

EID: 0033727164 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(00)00282-7 Document Type: Article

Times cited : (13)

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