Effect of incident angle in spectral ellipsometry on composition control during molecular beam epitaxial growth of HgCdTe

Journal of Electronic Materials

Volumn 28, Issue 6, 1999, Pages 756-759

  Aqariden, F ^a,b   Duncan, W M ^c   Shih, H D ^a   Almeida, L A ^d   Bevan, M J ^c  

^a DRS Sensors and Targeting Systems Inc   (United States)

^b UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^c TEXAS INSTRUMENTS   (United States)

^d E OIR Measurements Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELLIPSOMETRY; MATHEMATICAL MODELS; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; OPTIMIZATION; SEMICONDUCTOR GROWTH;

MERCURY CADMIUM TELLURIDE; SPECTROSCOPIC ELLIPSOMETRY;

SEMICONDUCTING FILMS;

EID: 0032630058     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0066-2     Document Type: Article

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