256 × 256 LWIR FPAs using MBE grown HgCdTe on Si substrates

NEC Research and Development

Volumn 39, Issue 1, 1998, Pages 1-6

  Ajisawa, Akira ^a   Kawano, Masaya ^a   Nomura, Mitsuko ^a   Miyoshi, Masaru ^a   Oda, Naoki ^a  

^a Material Development Center   (Japan)

Author keywords

HgCdTe (MCT); Hybrid reliability; Infrared Focal Plane Array (IRFPA); MBE (Molecular Beam Epitaxy); Si substrate

Indexed keywords

CARRIER CONCENTRATION; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; PHOTODIODES; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS; SUBSTRATES; FILM GROWTH; ION IMPLANTATION; MULTILAYERS; PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON;

INFRARED FOCAL PLANE ARRAYS (IRPFA); FOCAL PLANE ARRAYS (FPA); INDIUM BUMP ARRAYS; SILICON READOUT CIRCUITS;

INFRARED DETECTORS; OPTICAL FILMS;

EID: 0031648199     PISSN: 0547051X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

1. A. Kawahara, et al., "Hybrid 256 × 256 LWIR FPA Using MBE Grown HgCdTe on GaAs," SPIE, 2552, pp. 411-420, 1995.
2. T. Kanno, et al., "Development of MBE Grown HgCdTe 64 × 64 FPA for Long-Wavelength IR Detection," SPIE, 2020, pp. 41-48, 1993.
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9. A. Ajisawa and N. Oda, "Improvement in HgCdTe Diode Characteristics by Low Temperature Post-Implantation Annealing," J. Electron. Materials, 24, pp. 1105-1111, 1995.