Variable area MWIR diodes on HgCdTe/Si grown by molecular beam epitaxy

Journal of Electronic Materials

Volumn 29, Issue 6, 2000, Pages 636-640

  Ashokan, R ^a   Dhar, N K ^b   Yang, B ^a   Akhiyat, A ^a   Lee, T S ^a   Rujirawat, S ^a   Yousuf, S ^a   Sivananthan, S ^a  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC IMPEDANCE; INFRARED DETECTORS; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; PHOTOCONDUCTIVITY; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH;

MERCURY CADMIUM TELLURIDE;

HETEROJUNCTIONS;

EID: 0033700002     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0197-y     Document Type: Article

References (11)

1. J. Bajaj, Physics of Semiconductor Devices, Vol. 2 (New Delhi, India: Narosha Publishing House, 1998).
2. P. Wijewarnasuriya et al., J. Electron. Mater. 27, 546 (1998).
3. T.J. de Lyon et al., J. Electron. Mater. 27, 550 (1998).
4. N.K. Dhar, M. Zandian, J.G. Pasko, J.M. Arias, and J.H. Dinan, Appl. Phys. Lett. 70, 1730 (1997).
5. S. Rujirawat, L.A. Almeida, Y.P. Chen, S. Sivananthan, and D.J. Smith, Appl. Phys. Lett. 71, 1810 (1997), and references therein.
6. Xiaohong Shi, S. Rujirawat, R. Ashokan, C.H. Grein, and S. Sivananthan, Appl. Phys. Lett. 73, 638 (1998).
7. P.S. Wijewarnasuriya, M.D. Lange, S. Sivananthan, and J.P. Faurie, J. Electron. Mater. 24, 545 (1995).
8. G.N. Pultz, Peter W. Norton, E. Eric Krueger, and M.B. Reine, J. Vac. Sci. Technol. B9, 1724 (1991).
9. H.K. Chung, M.A. Rosenberg, and P.H. Zimmermann, J. Vac. Sci. Technol. A3, 189 (1985).
10. W.C. McLevige, G.M. Williams, R.E. DeWames, J. Bajaj, I.S. Gergis, A.H. Vanderwyck, and E.R. Blazejewski, Semicond. Sci. Technol. 8, 946 (1993).
11. V. Gopal, Semicond. Sci. Technol. 11, 1070 (1996).