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Volumn 29, Issue 6, 2000, Pages 636-640

Variable area MWIR diodes on HgCdTe/Si grown by molecular beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC IMPEDANCE; INFRARED DETECTORS; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; PHOTOCONDUCTIVITY; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH;

EID: 0033700002     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0197-y     Document Type: Article
Times cited : (25)

References (11)
  • 1
    • 0342317825 scopus 로고    scopus 로고
    • New Delhi, India: Narosha Publishing House
    • J. Bajaj, Physics of Semiconductor Devices, Vol. 2 (New Delhi, India: Narosha Publishing House, 1998).
    • (1998) Physics of Semiconductor Devices , vol.2
    • Bajaj, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.