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Volumn 29, Issue 6, 2000, Pages 636-640
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Variable area MWIR diodes on HgCdTe/Si grown by molecular beam epitaxy
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Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER MOBILITY;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRIC IMPEDANCE;
INFRARED DETECTORS;
MERCURY COMPOUNDS;
MOLECULAR BEAM EPITAXY;
PHOTOCONDUCTIVITY;
SEMICONDUCTING CADMIUM TELLURIDE;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DIODES;
SEMICONDUCTOR GROWTH;
MERCURY CADMIUM TELLURIDE;
HETEROJUNCTIONS;
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EID: 0033700002
PISSN: 03615235
EISSN: None
Source Type: Journal
DOI: 10.1007/s11664-000-0197-y Document Type: Article |
Times cited : (25)
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References (11)
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