Epitaxial growth of HgCdTe 1.55 μm avalanche photodiodes by molecular-beam epitaxy

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3629, Issue , 1999, Pages 256-267

  de Lyon, T J ^a   Baumgratz, B ^a   Chapman, G ^a   Gordon, E ^a   Hunter, A T ^a   Jack, M ^a   Jensen, J E ^a   Johnson, W ^a   Johs, B ^a   Kosai, K ^a   Larsen, W ^a   Olson, G L ^a   Sen, M ^a   Walker, B ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; CURRENT DENSITY; ENERGY GAP; IMPACT IONIZATION; INFRARED RADIATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

DARK CURRENT; SPLIT-OFF VALENCE BAND;

PHOTODIODES;

EID: 0032623388     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.344562     Document Type: Conference Paper

References (12)